Nitrogen-doping effect in a fast-pulled Cz-Si single crystal
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference21 articles.
1. VLSI Science and Technology;Abe,1985
2. Crystal-Originated Singularities on Si Wafer Surface after SC1 Cleaning
3. Recognition of D defects in silicon single crystals by preferential etching and effect on gate oxide integrity
4. Dependence of the Grown-in Defect Distribution on Growth Rates in Czochralski Silicon
5. Transmission Electron Microscope Observation of “IR Scattering Defects” in As-Grown Czochralski Si Crystals
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1. Effects of Nitrogen Doping on Pulling Rate Range of Defect-Free Crystal in CZ Silicon;Coatings;2023-09-18
2. Deep carrier traps in as grown isotopically pure 28 Si FZ crystal;physica status solidi (a);2017-05-26
3. Effect of pressure and temperature on bulk micro defect and denuded zone in nitrogen ambient furnace;Journal of the Korean Crystal Growth and Crystal Technology;2016-06-30
4. Impurity engineering of Czochralski silicon;Materials Science and Engineering: R: Reports;2013-01
5. Impurity Engineering of Czochralski Silicon;Solid State Phenomena;2009-10
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