MOCVD of tungsten nitride (WNx) thin films from the imido complex Cl4(CH3CN)W(NiPr)

Author:

Bchir Omar J,Johnston Steven W,Cuadra Amalia C,Anderson Timothy J,Ortiz Carlos G,Brooks Benjamin C,Powell David H,McElwee-White Lisa

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference49 articles.

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3. Investigation of copper metallization induced failure of diode structures with and without a barrier layer

4. TiN and TaN as diffusion barriers in metallizations to silicon semiconductor devices

5. B.L. Sharma, in: CRC Handbook of Chemistry and Physics 1999–2000, 80th Ed., D.R.Lide (Ed.), CRC Press, Cleveland, OH, 1999, p. 12–108.

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