Maskless selective epitaxy of InGaN by an InGa low energy focused ion beam and dimethylhydrazine
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference21 articles.
1. Elimination of interface defects in mismatched epilayers by a reduction in growth area
2. Growth of InxGa1−xAs on patterned GaAs(100) substrates
3. Reduction in misfit dislocation density by the selective growth of Si1−xGex/Si in small areas
4. Selective Growth of Cubic GaN in Small Areas on Patterned GaAs(100) Substrates by Metalorganic Vapor Phase Epitaxy
5. Fabrication of quantum wire structures by in-situ gas etching and selective-area metalorganic vapor phase epitaxy regrowth
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. InGaN compositional patterning by ultraviolet photoexcitation during NH3-based MOMBE – A pathway to 3D epitaxy;physica status solidi (c);2008-05
2. A study on maskless selective growth of Mg-doping p-type GaAs using low-energy focused ion beam;Journal of Crystal Growth;2007-04
3. Maskless selective growth and in situ beryllium-doping of GaAs grown by low-energy focused ion beam;Journal of Crystal Growth;2005-02
4. Doping Study on Maskless Selective Direct Growth of GaAs Using Low-Energy Focused Ion Beam;Japanese Journal of Applied Physics;2004-05-21
5. Maskless selective direct growth and doping of GaAs using a Ga–Sn low energy focused ion beam for in-situ micro-device structures fabrication;Journal of Crystal Growth;2002-04
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