MBE/MEE growth and characterization of C60-doped GaAs
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference3 articles.
1. C60: Buckminsterfullerene
2. Solid C60: a new form of carbon
3. Comparison of GaAs Facet Formation on Patterned Substrate during Molecular Beam Epitaxy and Migration Enhanced Epitaxy
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1. Growth and Characterization of Fullerene/GaAs Interfaces and C 60 -Doped GaAs and AlGaAs Layers;Molecular Beam Epitaxy;2018
2. Growth and characterisation of fullerene/GaAs interfaces and C60-doped GaAs and AlGaAs layers;Molecular Beam Epitaxy;2013
3. Electrical properties of C60 and Si codoped GaAs layers;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2012-03
4. Growth and characterization of C60/GaAs interfaces and C60 doped GaAs;Journal of Crystal Growth;2011-05
5. Electrical properties of C60 delta-doped GaAs and AlGaAs layers grown by MBE;physica status solidi (c);2010-06-22
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