Response surface modeling of the composition of AlAsySb1−y alloys grown by molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference12 articles.
1. Molecular‐beam epitaxy (MBE) of In1−xGaxAs and GaSb1−yAsy
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3. Study of molecular-beam epitaxy GaAs1−xSbx (x<0.76) grown on GaAs(100)
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5. Using statistical experimental design to investigate the role of the initial growth conditions on GaN epitaxial films grown by molecular beam epitaxy
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