The growth and characterization of GaInAsSb and AlGaAsSb on GaSb by metal-organic chemical vapor deposition
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference8 articles.
1. High-quantum-efficiency 0.5 eV GaInAsSb/GaSb thermophotovoltaic devices
2. A review of progress in thermophotovoltaic generation of electricityfnafnaI began writing this paper immediately after the Third nrel Conference on Thermophotovoltaic Genertion of materials, devices, and systems; substantial gains in fundamental understanding and performance of the quaternary alloy GaInAsSb; the introduction of new radiator concepts; and more attention being paid to modeling of both real and conceptual systems. There was also further evidence of interest in non-military applications, particularly from the European and Japanese attendees.
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4. The metalorganic chemical vapor deposition growth of AlAsSb and InAsSb/lnAs using novel source materials for Infrared Emitters
5. In situ pre-growth calibration using reflectance as a control strategy for MOCVD fabrication of device structures
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2. Epitaxy for Energy Materials;Handbook of Crystal Growth;2015
3. Characterization of Zn-Doped Ga0.86In0.14As0.13Sb0.87;Brazilian Journal of Physics;2014-10-01
4. Optical characterization of Zn-doped In0.14Ga0.86As0.13Sb0.87 layers grown by liquid phase epitaxy;Journal of Luminescence;2013-02
5. III-V and Related Semiconductor Materials;The Group 13 Metals Aluminium, Gallium, Indium and Thallium: Chemical Patterns and Peculiarities;2011-03-30
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