Structural and electrical properties of silicon epitaxial layers grown by LPE and CVD on identical polycrystalline substrates-Reference-Cited by-同舟云学术

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Structural and electrical properties of silicon epitaxial layers grown by LPE and CVD on identical polycrystalline substrates

Published:1997-04 Issue:1-4 Volume:174 Page:680-685
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Wagner G.,Wawra H.,Dorsch W.,Albrecht M.,Krome R.,Strunk H.P.,Riedel S.,Möller H.J.,Appel W.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference14 articles.

1. Proc. 13th European Photovoltaic Solar Energy Conf.;Vermeulen,1995

2. Proc. 13th European Photovoltaic Solar Energy Conf.;Nakajima,1995

3. Proc. 13th European Photovoltaic Solar Energy Conf.;Cotter,1995

4. Proc. 1st World Conf. on Photovoltaic Conversion;Rand,1994

5. Proc. 12th. European Photovoltaic Solar Energy Conf.;Werner,1994

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