Effects of high electrical stress on GaN/InGaN/AlGaN single-quantum-well light-emitting diodes-Reference-Cited by-同舟云学术

Effects of high electrical stress on GaN/InGaN/AlGaN single-quantum-well light-emitting diodes

Published:1998-06 Issue: Volume:189-190 Page:808-811
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Osiński Marek,Barton Daniel L,Perlin Piotr,Lee Jinhyun

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference7 articles.

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4. S. Nakamura, in: M. Osiński, W.W. Chow (Eds.), Physics and Simulation of Optoelectronic Devices V, San Jose, CA, 10–14 February 1997, SPIE Proc. 2994, pp. 2–12.

5. M. Osinński, P. Perlin, P.G. Eliseev, G. Liu, D.L. Barton, in: F.A. Ponce, T.D. Moustakas, I. Akasaki, B.A. Monemar (Eds.), III–V Nitrides, Boston, MA, 2–6 December, 1996, Mater. Res. Soc. Symp. Proc. 449, pp. 1179–1184.

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