InGaP/GaAs hole barrier asymmetry determined by (002) X-ray reflections and p-type DB-RTD hole transport
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference15 articles.
1. Evidence of type‐II band alignment at the ordered GaInP to GaAs heterointerface
2. High breakdown voltage InGaAs/InAlAs HFET using In0.5Ga0.5P spacer layer
3. GaAs bipolar transistors with a Ga/sub 0.5/In/sub 0.5/P hole barrier layer and carbon-doped base grown by MOVPE
4. Resonant tunneling of holes in Ga0.51In0.49P/GaAs double‐barrier heterostructures
5. Investigation of the heteroepitaxial interfaces in the GaInP/GaAs superlattices by high‐resolution x‐ray diffractions and dynamical simulations
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1. Evaluation of the composition of the interlayer at the inverted interface in InGaP/GaAs heterojunctions;Superlattices and Microstructures;2009-04
2. Parasitic Interlayer at the GaAs-on-InGaP Interface in MOVPE InGaP∕GaAs: A Study by the Chemically Sensitive (200) Diffraction;Journal of The Electrochemical Society;2009
3. Formation of rocking curves for quasi-forbidden reflections in short-periodic superlattices GaAs/AlGaAs;Journal of Applied Crystallography;2004-01-17
4. Thin layers of GaInP, GaP and GaAsP in metalorganic vapour phase epitaxy-grown resonant tunnelling diodes;Applied Surface Science;2002-05
5. Determination of structural parameters in heterojunction bipolar transistors by x-ray diffraction with (002) reflection;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2002-05
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