Metalorganic vapor-phase epitaxy of GaP1−x−yAsyNx quaternary alloys on GaP
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference6 articles.
1. Luminescence quenching and the formation of the GaP1−xNxalloy in GaP with increasing nitrogen content
2. Metalorganic vapor phase epitaxy of GaP1−xNxalloys on GaP
3. N incorporation in GaP and band gap bowing of GaNxP1−x
4. Γ-X mixing of the free and bound exciton in GaAs1-xPx
5. Nitrogen concentration dependence of photoluminescence decay time in GaP1−xNx alloys
Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. The band gap energy of the dilute nitride alloy GaNxAsyP1−x−y (0 ≤ x ≤ 0.07, 0 ≤ y ≤ 1) depending on content;Applied Physics A;2018-02
2. Parametrization of energy gap at the Γ point and outside this point for dilute nitrides: Ga1−yInyNxP1−x and GaNxAs1−x−zPz alloys;Journal of Applied Physics;2009-03-15
3. High-Temperature Growth of GaP on Si Substrates by Metalorganic Vapor Phase Epitaxy;Japanese Journal of Applied Physics;2009-01-20
4. Parameterization of the band gap energy for GaNxAs1−x−zPz alloys;Journal of Applied Physics;2007-06
5. III−V Nitride Epilayers for Photoelectrochemical Water Splitting: GaPN and GaAsPN;The Journal of Physical Chemistry B;2006-12-01
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