Evaluation of NF3 versus dimethylhydrazine as N sources for GaAsN-Reference-Cited by-同舟云学术

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Evaluation of NF3 versus dimethylhydrazine as N sources for GaAsN

Published:2002-01 Issue:2-3 Volume:234 Page:323-326
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Kurtz Sarah,Reedy R.,Keyes B.,Barber Greg D.,Geisz J.F.,Friedman D.J.,McMahon W.E.,Olson J.M.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference12 articles.

1. GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance

2. InGaAsN solar cells with 1.0 eV band gap, lattice matched to GaAs

3. 1-eV solar cells with GaInNAs active layer

4. Hydrogen and carbon incorporation in GaInNAs

5. Evidence of a thermally stable carbon-nitrogen deep level in carbon-doped, nitrogen-implanted, GaAs and AIGaAs

Cited by 27 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Nitrogen and carbon incorporation in GaNxAs1-x grown in a showerhead MOVPE reactor;Journal of Crystal Growth;2021-03

2. Cross Sections for Electron Collisions with NF3;Journal of Physical and Chemical Reference Data;2017-12

3. N–H related defect playing the role of acceptor in GaAsN grown by chemical beam epitaxy;Journal of Crystal Growth;2017-06

4. High nitrogen composition–induced low interfacial roughness of GaAs 0.978 N 0.022 /GaAs multiple quantum wells grown through solid-source molecular beam epitaxy;Materials Research Bulletin;2017-04

5. Molecular beam epitaxy growth of germanium junctions for multi-junction solar cell applications;Journal of Physics D: Applied Physics;2016-10-25

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