Properties of Mg doped GaAs grown by molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference21 articles.
1. RHEED oscillation studies of pseudomorphic InGaAs strained layers on GaAs substrate
2. A comparison of atomic carbon versus beryllium acceptor doping in GaAs grown by molecular beam epitaxy
3. Characterization of beryllium-doped molecular beam epitaxial grown GaAs by photoluminescence
4. Interplay of beryllium segregation and diffusion in heavily doped GaAs and AlGaAs grown by molecular beam epitaxy (thermodynamic analysis)
5. Beryllium doping and silicon amphotericity in (110) GaAs-based heterostructures: structural and optical properties
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1. Mg-Doping of (111)B GaAs Thin Films Grown by Molecular Beam Epitaxy;The Journal of Physical Chemistry C;2019-04-27
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3. Investigation of various optical transitions in GaAs/Al0.3Ga0.7As double quantum ring grown by droplet epitaxy;physica status solidi (RRL) - Rapid Research Letters;2016-09
4. Optical and Surface Characteristics of Mg-Doped GaAs Nanocrystalline Thin Film Deposited by Thermionic Vacuum Arc Technique;Journal of Electronic Materials;2016-08-29
5. GaInP/GaAs tandem solar cells with highly Te- and Mg-doped GaAs tunnel junctions grown by MBE;Chinese Physics B;2015-09-29
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