Theoretical investigation of migration of group V adatoms on GaAs(001) surface
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference13 articles.
1. First-principles calculations of surface adsorption and migration on GaAs surfaces
2. Novel Diffusion Mechanism on the GaAs(001) Surface: The Role of Adatom-Dimer Interaction
3. Arsenic adatom migration on a GaAs(100) surface using a first-principles calculation
4. First-Principle Calculation of Migration Processes of As during Growth on GaAs(001)
5. Surface migration of group V atoms in GaAsP grown on GaAs channeled substrates by molecular beam epitaxy
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. First principles calculation of Indium migration barrier energy on an InAs(001) surface;Thin Solid Films;2004-10
2. Dynamics of In atom during InAs/GaAs(0 0 1) growth process;Applied Surface Science;2003-06
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