Control of structure, size and density of Ge dot on Si (100) through multistep procedure
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference23 articles.
1. Growth and characterization of self-assembled Ge-rich islands on Si
2. In situ ultrahigh vacuum transmission electron microscopy studies of hetero-epitaxial growth I.
3. Formation of zero-dimensional hole states in Ge/Si heterostructures probed with capacitance spectroscopy
4. Deposition of three-dimensional Ge islands on Si(001) by chemical vapor deposition at atmospheric and reduced pressures
5. Size distribution of Ge islands grown on Si(001)
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Formation of Ge Nanodots Capped with SiC Layer by Gas-Source MBE Using MMGe and MMSi;ECS Transactions;2013-03-15
2. Fabrication of a SiC/Ge-Nanodots Stacked Structure Using Organometallic Compounds;Hyomen Kagaku;2012
3. Systematic studies of SiGe∕Si islands nucleated via separatein situorex situGa+ focused ion beam-guided growth techniques;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2006-03
4. Phase diagram of growth mode for the SiGe/Si heterostructure system with misfit dislocations;Journal of Crystal Growth;2004-01
5. Uniform dome-shaped self-assembled Ge islands by UHV/CVD after boron pre-deposition;MRS Proceedings;2004
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