Study on the effect of 65 nm NMOS transistor using SILVACO TCAD
Author:
Funder
Universiti Teknologi MARA
Publisher
Elsevier BV
Subject
Materials Science (miscellaneous)
Reference19 articles.
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2. Ion implantation of advanced silicon devices: past, present and future;Current;Mater. Sci. Semicond. Process.,2017
3. Study of Drain Induced Barrier Lowering(DIBL) effect for strained Si nMOSFET;Qu;Procedia Eng.,2011
4. Short-Channel Effects in SiC MOSFETs based on analyses of saturation drain current;Tachiki;IEEE Trans. Electron Devices,2021
5. F.A. Herrera et al., Modeling of short-channel effect on multi-gate MOSFETs for circuit simulation, in: 2020 International Symposium on Devices, Circuits and Systems (ISDCS), 2020.
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