STM study of geometric and electronic structures of Ge dimers on Si(001)
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference22 articles.
1. Structure and Adsorption Characteristics of Clean Surfaces of Germanium and Silicon
2. Scanning tunneling microscopy of Si(001)
3. Prediction of the effect of the sample biasing in scanning tunneling microscopy and of surface defects on the observed character of the dimers in the Si(001)-(2×1) surface
4. Molecular orbital theory for the scanning tunneling microscopy
5. First-Principles Electronic Structure Theory for Semi-infinite Semiconductors with Applications to Ge(001) (2×1) and Si(001) (2×1)
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1. Strain-induced growth instability and nanoscale surface patterning in perovskite thin films;Scientific Reports;2016-05-19
2. Ge/Si Heterostructures with Dense Chains of Stacked Quantum Dots;Journal of Nanoelectronics and Optoelectronics;2014-04-01
3. Dense chains of stacked quantum dots in Ge/Si heterostructures;SPIE Proceedings;2013-05-22
4. Ge quantum dot arrays grown by ultrahigh vacuum molecular-beam epitaxy on the Si(001) surface: nucleation, morphology, and CMOS compatibility;Nanoscale Research Letters;2011-09-05
5. An initial phase of Ge hut array formation at low temperature on Si(001);Journal of Applied Physics;2011-05-15
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