Misfit dislocations in epitaxial ZnTe/GaAs (001) studied by HRTEM-Reference-Cited by-同舟云学术

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Misfit dislocations in epitaxial ZnTe/GaAs (001) studied by HRTEM

Published:1993-06 Issue:1-4 Volume:51 Page:221-227
ISSN:0304-3991
Container-title:Ultramicroscopy
language:en
Short-container-title:Ultramicroscopy

Author:

Bauer S.,Rosenauer A.,Link P.,Kuhn W.,Zweck J.,Gebhardt W.

Publisher

Elsevier BV

Subject

Instrumentation,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference13 articles.

1. Blue (ZnSe) and green (ZnSe0.9Te0.1) light emitting diodes

2. Transmission electron microscopy of (001) ZnTe on (001) GaAs grown by molecular‐beam epitaxy

3. G. Feuillet, L. Di Cioccio, A. Million, J. Cibert and S. Tararenko, in: Microscopy of Semiconducting Materials 1987, Proc. Royal Microscopical Society Conf. held at Oxford University, Eds. A.G. Cullis and J.C. Hutchison.

4. Investigation of strained ZnTe epilayers by high resolution electron microscopy

5. Investigation of strain in metalorganic vapor‐phase epitaxy grown ZnTe layers by optical methods

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