Thin film Ti⧸6H-SiC interfacial reaction: high spatial resolution electron microscopy study-Reference-Cited by-同舟云学术

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Thin film Ti⧸6H-SiC interfacial reaction: high spatial resolution electron microscopy study

Published:1993-12 Issue:3-4 Volume:52 Page:289-296
ISSN:0304-3991
Container-title:Ultramicroscopy
language:en
Short-container-title:Ultramicroscopy

Author:

Bow J.S.,Porter L.M.,Kim M.J.,Carpenter R.W.,Davis R.F.

Publisher

Elsevier BV

Subject

Instrumentation,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference25 articles.

1. Interfacial reactions in Ti/SiC layered films with and without thin diffusion barriers

2. Metal-Ceramic Interfaces;Backhaus-Ricoult;Acta Scripta Metall. Proc. Ser.,1989

3. Interaction of Ti with C‐ and SiC‐contaminated Si surfaces

4. High-resolution electron microscopy of a SiC/SiC joint brazed by a Ag-Cu-Ti alloy

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1. Ti/4H-SiC schottky barrier modulation by ultrathin a-SiC:H interface layer;Thin Solid Films;2021-03

2. Ti and Ti/Sb ohmic contacts on n-type 6H–SiC;Microelectronic Engineering;2008-10

3. Capacitor Discharge Joining of Silicon Carbide Based Ceramics;Key Engineering Materials;2001-12

4. Tantalum carbide ohmic contacts ton-type silicon carbide;Applied Physics Letters;1999-12-20

5. Nickel film on (001) SiC: Thermally induced reactions;Materials Science and Engineering: B;1998-10

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