Vapour-deposited silicon dioxide for device applications
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials
Reference14 articles.
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1. High-thermal-resistant dielectric coating deposited by plasma polymerization;Materials Science and Engineering: A;1991-07
2. Photo-induced effect on the rectification behaviour of Al/Al2O3/InTe/Bi sandwich structures;Crystal Research and Technology;1988-09
3. Metal‐insulator‐semiconductor capacitors with bismuth oxide as insulator;Journal of Applied Physics;1981-07
4. MOS device fabrication using sputter-deposited gate oxide and polycrystalline silicon layers;Solid-State Electronics;1980-08
5. Fabrication of a m.o.s.f.e.t. with ‘spoxide’ as the gate dielectric having low interface state density;Electronics Letters;1978
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