Encapsulation and annealing studies of semi- insulating InP-Reference-Cited by-同舟云学术

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Encapsulation and annealing studies of semi- insulating InP

Published:1987-02 Issue:3 Volume:146 Page:221-231
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Farley C.W.,Kim T.S.,Streetman B.G.,Lareau R.T.,Williams Peter

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference22 articles.

1. The evaporation of GaAs under equilibrium and non-equilibrium conditions using a modulated beam technique

2. The evaporation of InP under Knudsen (equilibrium) and Langmuir (free) evaporation conditions

3. Implantation and PH 3 Ambient Annealing of InP

4. Close‐contact annealing of ion‐implanted GaAs and InP

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A new encapsulation method of InP during post implantation annealing;Applied Surface Science;1993-05

2. Ta-Si-N and Si3N4 Encapsulants for InP;MRS Proceedings;1992

3. Redistribution of Fe and Ti implanted into InP;Journal of Applied Physics;1991-09

4. Characterization of high temperature annealing of InP by scanning photoluminescence and capacitance-voltage measurements of metal/insulator/semiconductor devices;Materials Science and Engineering: B;1991-07

5. Silicon Nitride in Encapsulation and Recrystallization;Si Silicon;1991

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