Rapid thermal annealing of co-sputtered tantalum silicide films
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials
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1. 1 µm MOSFET VLSI technology: Part VII—Metal silicide interconnection technology—A future perspective
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3. Characteristics of ion-beam-synthesized molybdenum silicide film;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2006-01
4. Defect structures in cosputtered thin films of transition-metal disilicides with C11 b , C40 and C54 structures;Metallurgical and Materials Transactions A;2004-08
5. Defect structures in TaSi2 thin films produced by co-sputtering;Acta Materialia;2003-05
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