Molecular beam epitaxy grown Si/Si0.87Ge0.13 heterojunction bipolar transistors with ideal I–V characteristics-Reference-Cited by-同舟云学术

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Molecular beam epitaxy grown Si/Si0.87Ge0.13 heterojunction bipolar transistors with ideal I–V characteristics

Published:1992-12 Issue:1-2 Volume:222 Page:132-136
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Gravesteijn D.J.,Pruijmboom A.,Kersten W.J.,van Rooij-Mulder J.M.L.,Reader A.H.,Slotboom J.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference14 articles.

1. Proc. IEEE Symp. on VLSI Technology;Patton,1990

2. 73-GHz self-aligned SiGe-base bipolar transistors with phosphorus-doped polysilicon emitters

3. MBE-grown Si/SiGe HBTs with high beta , f/sub T/, and f/sub max/

4. Heterojunction bipolar transistors with SiGe base grown by molecular beam epitaxy

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. GexSi1-x Epitaxial Layer Growth and Application to Integrated Circuits;Thin Films;1997

2. Thin Film Epitaxial Layers on Silicon for the Detection of Infrared Signals;Thin Films;1997

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