Electronic structure of plasma-deposited amorphous Si-C alloy films
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials
Reference21 articles.
1. Electronic and optical properties of glow-discharge amorphous silicon-carbon alloys
2. Preparation of hydrogenated amorphous Si-C alloy films and their properties
3. Properties of undoped and p-type hydrogenated amorphous silicon carbide films
4. Hydrogenated amorphous silicon carbide as a window material for high efficiency a-Si solar cells
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1. Numerical Simulation of Two-Phase Flows with Phase Change Using a Phase-Field Method;Progress in Multiphase Flow Research;2007
2. Amorphous semiconductor and amorphous insulator — two kinds of hydrogenated carbon–silicon films fabricated in the three-electrode reactor;Surface and Coatings Technology;2001-07
3. Effect of deposition temperature on the optical transmission and paramagnetic centers in pulsed laser deposited amorphous silicon carbide thin films;Journal of Applied Physics;2000-11
4. Electronic band structure of insulating hydrogenated carbon-germanium films;Journal of Applied Physics;1999-10-15
5. Ionization of tetraethylgermanium,;Journal of Physics B: Atomic, Molecular and Optical Physics;1999-01-01
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