Silane oxidation study: Analysis of data for SiO2 films deposited by low temperature chemical vapour deposition
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials
Reference19 articles.
1. 281. The oxidation of the silicon hydrides. Part I
2. Deposition of silica films by the oxidation of silane in oxygen
3. Deposition of silica films by the oxidation of silane in oxygen II: The calculation of growth rates in the tube reactor
4. An Infrared Absorption Study of LTCVD Silicon Dioxide
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1. Effect of N2O/SiH4 ratio on the properties of low-temperature silicon oxide films from remote plasma chemical vapour deposition;Thin Solid Films;1996-07
2. Characterization of Semi‐Insulating Polycrystalline Silicon Prepared by Low Pressure Chemical Vapor Deposition;Journal of The Electrochemical Society;1993-09-01
3. Reaction Mechanism of Mercury-Sensitized Photochemical Vapor Deposited Silicon Oxide;Japanese Journal of Applied Physics;1993-01-15
4. Preparation of silicon dioxide films by low-pressure chemical vapor deposition on dense and porous alumina substrates;Chemical Engineering Science;1992-10
5. Micro/Macrocavity Method Applied to the Study of the Step Coverage Formation Mechanism of SiO2 Films by LPCVD;Journal of The Electrochemical Society;1990-04-01
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