Microstructure and optical properties of GaN films on sapphire substrates-Reference-Cited by-同舟云学术

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Microstructure and optical properties of GaN films on sapphire substrates

Published:2000-12 Issue:6 Volume:21 Page:579-582
ISSN:0261-3069
Container-title:Materials & Design
language:en
Short-container-title:Materials & Design

Author:

Chen Zhizhong,Zhu Jianming,Shen Bo,Zhang Rong,Zhou Yugang,Chen Peng,Li Weiping,Liu Wenjun,Wang Zhenlin,Zheng Youdou,Jiang Shusheng

Publisher

Elsevier BV

Subject

Applied Mathematics,General Mathematics

Reference14 articles.

1. GaN, AlN, and InN: A review

2. Extended defects in wurtzite nitride semiconductors

3. Correlation of cathodoluminescence inhomogeneity with microstructural defects in epitaxial GaN grown by metalorganic chemical-vapor deposition

4. Spatial distribution of the luminescence in GaN thin films

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Thermal stress cleavage of a single-crystal round sapphire bar by carbon dioxide laser;Journal of Materials Processing Technology;2021-11

2. Effect of ultrasonic elliptical vibration assistance on the surface layer defect of M-plane sapphire in microcutting;Materials & Design;2020-07

3. Effects of annealing on the luminescent properties from defects formed in electron-irradiated GaN;Radiation Measurements;2012-10

4. Characterizations of n-type ferromagnetic GaMnN thin film grown on GaN/Al2O3 (0001) by metal-organic chemical vapor deposition;Journal of Magnetism and Magnetic Materials;2009-12

5. Fabrication of GaN films through reactive reconstruction of magnetron sputtered ZnO/Ga2O3;Journal of Central South University of Technology;2005-02-01

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