Effect of spacer layer on quantum interference in double-barrier resonant tunneling structures-Reference-Cited by-同舟云学术

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Effect of spacer layer on quantum interference in double-barrier resonant tunneling structures

Published:1996-07 Issue: Volume:361-362 Page:235-238
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Belyaev A.E.,Vitusevich S.A.,Figielski T.,Glavin B.A.,Konakova R.V.,Kravchenko L.N.,Makosa A.,Wosinski T.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference2 articles.

1. Sequential Single-Phonon Emission in GaAs-AlxGa1−xAsTunnel Junctions

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Mechanisms of current formation in resonant tunneling AlN∕GaN heterostructures;Applied Physics Letters;2007-11-26

2. Fine structure of photoresponse spectra in a double-barrier resonant tunnelling diode;Nanotechnology;2000-11-09

3. Spectral responsivity of single-quantum-well photodetectors;Applied Physics Letters;2000-07-03

4. Tunneling throughX-valley-related impurity states in GaAs/AlAs resonant-tunneling diodes;Physical Review B;2000-04-15

5. Coherent and Sequential Tunneling in High Magnetic Field;Acta Physica Polonica A;1997-10

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