Angle-resolved photoemission studies of clean and adsorbed Si(001) surfaces: 2 × 1, c(4 × 2), 2 × 1-Na and 2 × 2-Ga
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference26 articles.
1. Order-disorder transition on Si(001): c(4 × 2) to (2 × 1)
2. Photoelectron diffraction and low energy electron diffraction studies of Cs, K/Si(001) surfaces
3. RHEED studies of Si(100) surface structures induced by Ga evaporation
4. Electronic structure of the single-domain Si(001)21-K surface
5. Electronic states of Si(100) reconstructed surfaces
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