(InAs)m(GaAs)n superlattice grown by beam-separation MBE method
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference8 articles.
1. A New High-Electron Mobility Monolayer Superlattice
2. Intern. Conf. on Superlattices, Microstructures and Microdevices;Grunthaner,1984
3. Growth of a novel InAs‐GaAs strained layer superlattice on InP
4. (InAs)m(GaAs)n superlattices grown by molecular beam epitaxy
5. (InAs)1(GaAs)1Layered Crystal Grown by MOCVD
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1. Negative photoinduced current and negative differential characteristics of new optoelectronic sensors with InAs/GaAs nanostructure for visual recognition;Journal of Materials Science: Materials in Electronics;2007-06-05
2. Effects of carrier‐storage layer of InAs/GaAs short period superlattice on photocurrent in GaAs/GaAlAs multi‐quantum well structure;Journal of Applied Physics;1996-05-01
3. Nonlinear characteristics induced by carrier accumulation in InAs/GaAs superlattice cap layer on GaAs/GaAlAs multi-quantum well structure;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1996-03-01
4. Nonlinear characteristics induced by accumulation of photogenerated holes in GaAs/GaAlAs multi‐quantum well structure under weak photoexcitation;Journal of Applied Physics;1995-12-15
5. Energy-band gap of monolayer superlattices calculated by a modified tight-binding method with electronegativity;Physical Review B;1993-09-15
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