Landau levels of the two-dimensional holes gas in GaAs with inclusion of the anisotropy of the band structure
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference9 articles.
1. Effective masses of holes at GaAs-AlGaAs heterojunctions
2. Self-consistent calculations of electric subbands in p-type GaAlAs-GaAs heterojunctions
3. U. Ekenberg and M. Altarelli, to be published.
4. Hole Subband at GaAs/AlGaAs Heterojunctions and Quantum Wells
5. Energy Structure and Quantized Hall Effect of Two-Dimensional Holes
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1. Dimensional reduction of the Luttinger Hamiltonian andg-factors of holes in symmetric two-dimensional semiconductor heterostructures;Physical Review B;2017-02-23
2. Transport evidence of the lowest Landau-level spin-index anticrossing in (110) GaAs two-dimensional holes;Physical Review B;2007-02-06
3. Self-Consistent Calculation of the Electronic Structure of an Inversion Layer in a Perpendicular Magnetic Field;physica status solidi (b);2006-02-19
4. Cyclotron resonance at microwave frequencies in two-dimensional hole system in AlGaAs/GaAs quantum wells;Applied Physics Letters;2003-10-27
5. Superlinear photoluminescence and vertical transport of photoexcited carriers in modulation-doped heterojunctions;SPIE Proceedings;2000-03-28
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