Transition in the growth kinetics of vacancy islands on NbSe2
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
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3. Scanning-Tunneling-Microscope Observation of the Abrikosov Flux Lattice and the Density of States near and inside a Fluxoid
4. Optical Properties of Single Crystals of NbSe2 and Nb1.04Se2
5. Effect of Atomic Force on the Surface Corrugation of 2H-NbSe2Observed by Scanning Tunneling Microscopy
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1. Electrical Stressing Induced Monolayer Vacancy Island Growth on TiSe2;Nano Letters;2018-02-20
2. Dopant Enhanced Etching of TiSe2 by Scanning Tunneling Microscopy;Langmuir;2010-06-15
3. Characterization and nanometer-scale modifications of Bi[sub 2]Te[sub 3] surface via atomic force microscopy;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2000
4. Mesoscopic scanning tunneling and atomic force microscopy study of the misfit-layer compounds (LaSe)xNbSe2 and (PbSe)xNbSe2;Surface Science;1999-11
5. Rigid diffusion paths in droplet growth;The Journal of Chemical Physics;1999-06-22
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