Internal field emission from oxide states into germanium
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference5 articles.
1. Internal Field Emission on Germanium Surface at a. c. Field Effect
2. Unreal accumulation effect during A-C field effect on Ge
3. Observation of Slow States on Germanium Surface by Tunneling at d-c Field Effect
4. Slow non-exponential changes oe surface conductivity of germanium
5. New interpretation of slow surface relaxations on germanium
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1. Current Limited by Transport Through the Space‐Charge Region of a Semiconductor Electrode;Journal of The Electrochemical Society;1981-06-01
2. Tunneling recharging of oxide centres in silicon mos structures;Physica Status Solidi (a);1975-11-16
3. Investigation of long-term processes on a real germanium surface;Surface Science;1971-12
4. Tunnel mechanism in MNOS structures;Physica Status Solidi (a);1970-01-16
5. Dominant Surface Electronic Properties of SiO2‐Passivated Ge Surfaces as a Function of Various Annealing Treatments;Journal of Applied Physics;1968-10
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