Growth of bismuth on the Si(100) surface: AES and LEED study
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference13 articles.
1. Physics and electronics of the noble-metal/elemental-semiconductor interface formation: A status report
2. Adsorption of Al on cleaved Si (111) at room temperature
3. Indium overlayers on clean Si(100)2×1: Surface structure, nucleation, and growth
4. Structural reactions of Si{111}7 × 7 with metals
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1. Lattice accommodation of epitaxial Bi(111) films on Si(001) studied with SPA-LEED and AFM;Physical Review B;2006-11-29
2. Thermal boundary conductance in heterostructures studied by ultrafast electron diffraction;New Journal of Physics;2006-09-14
3. The concerted movements of weakly bonded Bi dimers on the Si(100)2×1 surface;Surface Science;2002-06
4. Coadsorption of hydrogen and bismuth on the Si(111)7×7 surface;Surface Science;2000-05
5. Core-level photoemission study of 2D ordered Bi/Si(100) interfaces;Surface Science;1999-06
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