Observation of resonant electron capture in AlGaAs/GaAs quantum well structures
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference8 articles.
1. Resonant carrier capture by semiconductor quantum wells
2. Effective-mass eigenfunctions in superlattices and their role in well-capture
3. Carrier collection in a semiconductor quantum well
4. Capture of electrons and holes in quantum wells
5. Dynamics of carrier capture in an InGaAs/GaAs quantum well trap
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1. Carrier Diffusion in GaN : A Cathodoluminescence Study. II. Ambipolar versus Exciton Diffusion;Physical Review Applied;2022-02-07
2. Influence of Holes Capture Efficiency on Photoluminescence Temperature Dependence of n-AlGaAs/GaAs Quantum-Well Structures;Semiconductors;2019-12
3. Oscillatory Rate of Excess Carrier Capture into Quantum Wells of the AlGaAs/GaAs Heterostructures;Journal of Communications Technology and Electronics;2018-10
4. Dynamics of the Accumulation of Excess Holes in n-AlGaAs/GaAs Heterostructure Quantum Wells;Russian Microelectronics;2017-12
5. Photoluminescence study of single-side doped n-AlGaAs/GaAs structures with quantum wells;Russian Microelectronics;2012-11-07
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