Surface structure of GaAs(211)
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference12 articles.
1. Polar‐on‐nonpolar epitaxy: Sublattice ordering in the nucleation and growth of GaP on Si(211) surfaces
2. G. Sullivan and H. Kroemer, unpublished results.
3. Polar heterojunction interfaces
4. Alloy Clustering inGa1−xAlxAsCompound Semiconductors Grown by Molecular Beam Epitaxy
5. LEED studies of clean high Miller index surfaces of silicon
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