AES quantitative interpretation of the first stages of Pd2Si formation during Pd adsorption on Si(111) at room temperature
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference14 articles.
1. Structure and electrical characteristics of epitaxial palladium silicide contacts on single crystal silicon and diffused P-N diodes
2. Application of Auger electron spectroscopy to studies of the silicon/silicide interface
3. Chemical bonding and electronic structure ofPd2Si
4. Stoichiometric and Structural Origin of Electronic States at thePd2Si-Si Interface
5. Microscopic properties and behavior of silicide interfaces
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Cu(111) Surface Passivation with Atomic Layers of Te, Se or I, Studied Using Auger Spectrscopy;Journal of The Electrochemical Society;2012
2. Formation of a palladium-silicon interface by silane chemical vapor deposition on Pd(100);Physical Review B;2000-03-15
3. Silicide formation at palladium surfaces. Part I: Crystalline and amorphous silicide growth at the Pd(110) surface;Surface Science;1998-05
4. An experimental study of an interface reaction at the practical Pd/Si interface by XPS;Vacuum;1995-02
5. Surface Analysis: X-ray Photoelectron Spectroscopy and Auger Electron Spectroscopy;Analytical Chemistry;1994-06-01
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