De-excitation in solid SiCl4 following deep-core excitation at the K-edge: relation between ion desorption and auger decay
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference10 articles.
1. Ion Desorption by Core-Hole Auger Decay
2. Synchrotron radiation induced reactions on surfaces: mechanisms and applications
3. Valence core excited states and multielectron effects in the photoabsorption spectrum of Si(CH3)xCl4-x molecules, near the silicon and chlorine K edges
4. Molecular orientations of condensed Si(CH3)nCl4-n(0
5. Atomic radiative and radiationless yields for K and L shells
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1. Dissociation dynamics of positive-ion and negative-ion fragments of gaseous and condensed Si(CH3)2Cl2 via Si 2p, Cl 2p, and Cl 1s core-level excitations;The Journal of Chemical Physics;2006-12-07
2. Unoccupied states in the band gap ofδ-doped Si in GaAs probed by Auger resonance spectroscopy;Physical Review B;2005-02-16
3. State-specific photochemistry of SiCl4 condensed on Si(100) with synchrotron radiation;The Journal of Chemical Physics;2003-03-15
4. Element-specific and site-specific ion desorption from adsorbed molecules by deep core-level photoexcitation at theK-edges;Low Temperature Physics;2003-03
5. A round robin experiment of elemental sensitivity factors in low-energy ion scattering;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1998-07
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