Improvement in the mechanical performance of Czochralski silicon under indentation by germanium doping-Reference-Cited by-同舟云学术

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Improvement in the mechanical performance of Czochralski silicon under indentation by germanium doping

Published:2011-05 Issue:9 Volume:64 Page:832-835
ISSN:1359-6462
Container-title:Scripta Materialia
language:en
Short-container-title:Scripta Materialia

Author:

Zeng Zhidan,Wang Lin,Ma Xiangyang,Qu Shaoxing,Chen Jiahe,Liu Yonggang,Yang Deren

Publisher

Elsevier BV

Subject

Condensed Matter Physics,General Materials Science,Mechanics of Materials,Metals and Alloys,Mechanical Engineering

Reference40 articles.

1. Studies of chipping mechanisms for dicing silicon wafers

2. Load induced stresses and plastic deformation in 450mm silicon wafers

3. Thermally induced stress in partial SOI structure during high temperature processing

4. Nitrogen effects on generation and velocity of dislocations in Czochralski-grown silicon

5. Nitrogen diffusion and interaction with dislocations in single-crystal silicon

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