Nitrogen incorporated GeTe phase change thin film for high-temperature data retention and low-power application-Reference-Cited by-同舟云学术

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Nitrogen incorporated GeTe phase change thin film for high-temperature data retention and low-power application

Published:2011-08 Issue:4 Volume:65 Page:327-330
ISSN:1359-6462
Container-title:Scripta Materialia
language:en
Short-container-title:Scripta Materialia

Author:

Peng Cheng,Wu Liangcai,Rao Feng,Song Zhitang,Zhou Xilin,Zhu Min,Liu Bo,Yao Dongning,Feng Songlin,Yang Pingxiong,Chu Junhao

Publisher

Elsevier BV

Subject

Condensed Matter Physics,General Materials Science,Mechanics of Materials,Metals and Alloys,Mechanical Engineering

Reference22 articles.

1. Phase-change materials for rewriteable data storage

2. Phase-Change Materials for Electronic Memories

3. Reversible Electrical Switching Phenomena in Disordered Structures

4. Low-cost and nanoscale non-volatile memory concept for future silicon chips

5. Characteristics of chalcogenide nonvolatile memory nano-cell-element based on Sb2Te3 material

Cited by 47 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Evidence for Ge2Sb2Te5 phase formation upon crystallization of Ge-doped Sb2Te3 phase change films;Vacuum;2024-09

2. Phase Change Heterostructure Memory with Oxygen‐Doped Sb₂Te₃ Layers for Improved Durability and Reliability through Nano crystalline Island Formation;Small;2024-04-15

3. Evidence for Ge2sb2te5 Phase Formation Upon Crystallization of Ge-Doped Sb2te3 Phase Change Films;2024

4. Thermal stability and high speed for optoelectronic hybrid phase-change memory based on Cr doped Ge2Sb2Te5 thin film;Ceramics International;2023-12

5. In-situ Raman scattering study of nitrogen doped GeTe phase-change films;Materials Letters;2023-04

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