Crack-free interface in wafer-bonded Ge/Si by patterned grooves-Reference-Cited by-同舟云学术

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Crack-free interface in wafer-bonded Ge/Si by patterned grooves

Published:2010-03 Issue:6 Volume:62 Page:407-410
ISSN:1359-6462
Container-title:Scripta Materialia
language:en
Short-container-title:Scripta Materialia

Author:

Argunova T.S.,Gutkin M.Yu.,Kostina L.S.,Grekhov I.V.,Belyakova E.I.,Je J.H.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,General Materials Science,Mechanics of Materials,Metals and Alloys,Mechanical Engineering

Reference22 articles.

1. Ge on Si p-i-n photodiodes operating at 10Gbit∕s

2. Characterization of Ge-on-Si virtual substrates and single junction GaAs solar cells

3. Strain and lattice engineering for Ge FET devices

4. Ge/Si Heterojunction Photodiodes Fabricated by Wafer Bonding

5. Electron mobility enhancement using ultrathin pure Ge on Si substrate

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Dislocation nucleation triggered by thermal stress during Ge/Si wafer bonding process at low annealing temperature;Applied Surface Science;2021-12

2. Chemical Reactions and Mechanical Properties of the Directly Bonded Ge-Si Interface;AIP Conference Proceedings;2011

3. Interface Morphology Investigation of Bonded p-GaAs/p-Si Wafers;ECS Transactions;2010-10-01

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