登录 注册 会员服务 联系我们

Ion angle dependence in the preferential sputtering of InP

  • Published:1993-06 Issue: Volume:70-71 Page:322-326
  • ISSN:0169-4332
  • Container-title:Applied Surface Science
  • language:en
  • Short-container-title:Applied Surface Science

Author:

Malherbe J.B.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference21 articles.

1. Sputtering by Particle Bombardment II;Betz,1984

2. Sputtering by Particle Bombardment;Sigmund,1981

3. Practical Surface Analysis by Auger and X-ray Photoelectron Spectroscopy;Hofmann,1983

4. Structural And Compositional Modifications of III–V Ternary and Quaternary Compounds Induced by Ion Bombardment

5. Preferential sputtering of InP: an AES investigation

Cited by 20 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Deconvolution models for determining the real surface composition of InP (1 0 0) after bombardment with 5 keV Ar ions at different angles;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2019-12

2. Accumulated sidewall damage in dry etched photonic crystals;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2009

3. Impact of dry-etching induced damage in InP-based photonic crystals;SPIE Proceedings;2008-04-25

4. Electronic structure of gadolinium calcium oxoborate;Applied Surface Science;2005-12

5. X-ray photoelectron spectroscopy of electrodeposited cadmium mercury telluride thin films and their native surface oxides;Journal of Materials Research;2001-07
同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号  京ICP备18003416号-3