Ballistic electron emission microscopy of Schottky diodes on RF-plasma-treated silicon-Reference-Cited by-同舟云学术

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Ballistic electron emission microscopy of Schottky diodes on RF-plasma-treated silicon

Published:1993-06 Issue: Volume:70-71 Page:391-395
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Quattropani Lidia,Solt Katalin,Niedermann Philipp,Maggio-Aprile Ivan,Fischer Øystein,Pavelka Tibor

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference15 articles.

1. Direct investigation of subsurface interface electronic structure by ballistic-electron-emission microscopy

2. The effects of sputtering damage on the characteristics of molybdenum-silicon Schottky barrier diodes

3. 2.2 Substrate surface damages by rf-sputtering

4. Electrical characteristics of sputtering-induced defects in n-type silicon

5. Effect of ion‐beam sputter damage on Schottky barrier formation in silicon

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Theory of ballistic electron emission microscopy;Physical Review B;2001-09-10

2. Electrical characterization of Ar-ion-bombardment-induced damage in Au/Si and PtSi/Si Schottky barrier contacts;Semiconductor Science and Technology;2001-01-22

3. Ion-bombardment effects on PtSi/n-Si Schottky contacts studied by ballistic electron emission microscopy;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2000

4. The Metal-Semiconductor Interface;Electronic Structure;2000

5. A Beem Study of PtSi Schottky Contacts on Ion-Milled Si;MRS Proceedings;1999

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