Improved thermal stability of cobalt silicide formed by ion beam assisted deposition on polysilicon-Reference-Cited by-同舟云学术

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Improved thermal stability of cobalt silicide formed by ion beam assisted deposition on polysilicon

Published:1995-10 Issue:1-4 Volume:91 Page:19-23
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Ravesi S.,La Via F.,Raineri V.,Spinella C.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference7 articles.

1. Ultra-shallow junction formation using silicide as a diffusion source and low thermal budget

2. F. La Via, C. Spinella and E. Rimini, Semicond. Sci. Technol., to be published.

3. Thermal stability and dopant drive‐out characteristics of CoSi2polycide gates

4. Degradation mechanisms and improvement of thermal stability of CoSi2/polycrystalline Si layers

5. Thermal stability of cobalt silicide thin films on Si(100)

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Formation of cobalt silicide from filter metal vacuum arc deposited films;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2006-06

2. Thermal stability enhancement of silicides by using N2 and Ar implantation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2005-08

3. Thin-Film Deposition Materials;Handbook of Chemicals and Gases for the Semiconductor Industry;2002-07-15

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