Tailored heterointerface formation in InGaAs/InP superlattices by gas source migration-enhanced epitaxy-Reference-Cited by-同舟云学术

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Tailored heterointerface formation in InGaAs/InP superlattices by gas source migration-enhanced epitaxy

Published:1994-01 Issue:1-4 Volume:75 Page:233-241
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Mozume Teruo,Kashima Hideo,Hosomi Kazuhiko,Ogata Kiyoshi,Suenaga Kazuhumi,Nakano Asao

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference35 articles.

1. 1.5–1.6‐μm Ga0.47In0.53As/Al0.48In0.52As multiquantum well lasers grown by molecular beam epitaxy

2. Optical properties of GaInAs/AlInAs single quantum wells

3. Atomic steps at GaInAs/InP interfaces grown by organometallic vapor phase epitaxy

4. Systematic studies on the effect of growth interruptions for GaInAs/InP quantum wells grown by atmospheric pressure organometallic vapor‐phase epitaxy

5. Optical investigation of atomic steps in ultrathin InGaAs/InP quantum wells grown by vapor levitation epitaxy

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Experimental insights toward carrier localization in in-rich InGaAs/InP as candidate for SWIR detection: Microstructural analysis combined with optical investigation;Materials Science in Semiconductor Processing;2023-01

2. Layer-resolved release of epitaxial layers in III-V heterostructure via a buffer-free mechanical separation technique;Science Advances;2022-01-21

3. Transmission electron microscopy study of the InP/InGaAs and InGaAs/InP heterointerfaces grown by metalorganic vapor-phase epitaxy;Journal of Applied Physics;2002-11-15

4. Be redistribution in InGaAs and InP grown by gas source molecular beam epitaxy;Journal of Crystal Growth;1997-05

5. EFFECT OF SOURCE-SUPPLY INTERRUPTIONS ON THE INTERFACE ABRUPTNESS IN GAS-SOURCE MOLECULAR-BEAM EPITAXY-GROWN INGAAS/INP HETEROSTRUCTURES;J CRYST GROWTH;1995

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