Dynamic scaling of the growth process of GaN thin films deposited on sapphire substrates by HVPE
Author:
Publisher
Elsevier BV
Subject
General Physics and Astronomy
Reference18 articles.
1. Influence of growth rate on the structure of thick GaN layers grown by HVPE
2. Infrared reflectance analysis of GaN epitaxial layers grown on sapphire and silicon substrates
3. AFM measurement of initially grown GaN layer on GaAs substrate
4. In SituMonitoring of GaN Growth Using Interference Effects
5. The impact of initial growth and substrate nitridation on thick GaN growth on sapphire by hydride vapor phase epitaxy
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1. Insight into the Ga/In flux ratio and crystallographic plane dependence of MBE self-assembled growth of InGaN nanorods on patterned sapphire substrates;Nanoscale;2020
2. 2D scaling behavior of nanotextured GaN surfaces: A case study of hillocked and terraced surfaces;Applied Surface Science;2018-07
3. Enhanced leakage current properties of HfO2/GaN gate dielectric stack by introducing an ultrathin buffer layer;Journal of Materials Science: Materials in Electronics;2013-10-27
4. Band alignments and improved leakage properties of (La2O3)0.5(SiO2)0.5/SiO2/GaN stacks for high-temperature metal-oxide-semiconductor field-effect transistor applications;Applied Physics Letters;2009-06-22
5. Complete composition tunability of InGaN nanowires using a combinatorial approach;Nature Materials;2007-10-28
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