Quantum transport in p-type narrow channel with DC-biased double finger gate-Reference-Cited by-同舟云学术

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Quantum transport in p-type narrow channel with DC-biased double finger gate

Published:2022-07 Issue: Volume:439 Page:128140
ISSN:0375-9601
Container-title:Physics Letters A
language:en
Short-container-title:Physics Letters A

Author:

Chen Wei-An,Phan Quoc-Hung,Tang Chi-Shung^ORCID,Abdullah Nzar Rauf,Gudmundsson Vidar^ORCID

Funder

Ministry of Science and Technology, Taiwan

Publisher

Elsevier BV

Subject

General Physics and Astronomy

Reference30 articles.

1. Highly confined two-dimensional electron gas in an In0.52AI0.48As/In0.52Ga0.47As modulation-doped structure with a strained InAs quantum well

2. Determination of the depletion layer width and effects on the formation of double-2DEG in AlGaAs/GaAs heterostructures

3. Spin-orbit interactions in inversion-asymmetric two-dimensional hole systems: A variational analysis

4. Vertical-type two-dimensional hole gas diamond metal oxide semiconductor field-effect transistors

5. High Output Power Density of 2DHG Diamond MOSFETs With Thick ALD-Al2O3

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ballistic spin transport in DC-bias single top gate p-type narrow channel device with Zeeman–Rashba effects;Physica B: Condensed Matter;2023-05

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