Different substitutions lead to differences in the transport and recombination properties of group V doped SiCNTs-Reference-Cited by-同舟云学术

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Different substitutions lead to differences in the transport and recombination properties of group V doped SiCNTs

Published:2020-09 Issue:25 Volume:384 Page:126602
ISSN:0375-9601
Container-title:Physics Letters A
language:en
Short-container-title:Physics Letters A

Author:

Yang Ying-Ying,Gong Pei,Ma Wan-Duo,Li Ya-Lin,Fang Xiao-Yong,Jia Ya-Hui,Cao Mao-Sheng

Funder

National Natural Science Foundation of China

Natural Science Foundation of Hebei Province

Publisher

Elsevier BV

Subject

General Physics and Astronomy

Reference33 articles.

1. Continuous SiC fiber, CVI SiC matrix composites for nuclear applications: Properties and irradiation effects

2. SiC materials-progress, status, and potential roadblocks

3. SiC microwave power technologies

4. Thermoluminescence dosimetric properties of silicon carbide (SiC) used in industrial applications

5. Electronic properties of a silicon carbide nanotube under uniaxial tensile strain: a density function theory study

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1. Emerging trends in lanthanide-based upconversion and downconversion material for PSCs & DSSCs;Journal of Materials Science;2024-09-11

2. Transport and recombination properties of doped SiC nanoribbons with different atoms substituted by group-V elements;Materials Science and Engineering: B;2023-09

3. Experimental measurements;Fundamental Physicochemical Properties of Germanene-Related Materials;2023

4. Effect of Sb/Bi doping sites on electronic structure and transport properties of Mg2Si0.375Sn0.625 alloy from first-principles calculations;Materials Science and Engineering: B;2022-11

5. Highly Sensitive and Selective Triethylamine Sensing through High-Entropy Alloy (Ti–Zr–Cr–V–Ni) Nanoparticle-Induced Fermi Energy Control of MoS₂ Nanosheets;ACS Applied Materials & Interfaces;2022-03-11

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