Oxygen vacancy enhanced the room temperature ferromagnetism in Ni-doped TiO2 thin films-Reference-Cited by-同舟云学术

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Oxygen vacancy enhanced the room temperature ferromagnetism in Ni-doped TiO2 thin films

Published:2007-04 Issue:3-4 Volume:364 Page:318-322
ISSN:0375-9601
Container-title:Physics Letters A
language:en
Short-container-title:Physics Letters A

Author:

Hou D.L.,Meng H.J.,Jia L.Y.,Ye X.J.,Zhou H.J.,Li X.L.

Publisher

Elsevier BV

Subject

General Physics and Astronomy

Reference22 articles.

1. Anisotropic Ferromagnetism in Substituted Zinc Oxide

2. Room-Temperature Ferromagnetism in Transparent Transition Metal-Doped Titanium Dioxide

3. Ferromagnetism in Fe-doped SnO2 thin films

4. Zn0.9Co0.1O-based diluted magnetic semiconducting thin films

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2. Optical, Impedance, and DFT Study of Ternary SnO₂-Fe-Cu Nanoparticles;ECS Journal of Solid State Science and Technology;2023-10-01

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4. Oxide thin films grown by sputtering technique;Defect-Induced Magnetism in Oxide Semiconductors;2023

5. High anisotropic magnetoresistance, perfect spin-filtering effect, and negative differential resistance effect of Cr-doped anatase phase TiO₂;Physica Scripta;2022-12-20

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