p-type doping of GaInNAs quaternary alloys
Author:
Publisher
Elsevier BV
Subject
General Physics and Astronomy
Reference22 articles.
1. Red Shift of Photoluminescence and Absorption in Dilute GaAsN Alloy Layers
2. Giant and Composition-Dependent Optical Bowing Coefficient in GaAsN Alloys
3. Band Anticrossing in GaInNAs Alloys
4. Localization and anticrossing of electron levels inGaAs1−xNxalloys
5. Interactions between nitrogen, hydrogen, and gallium vacancies inGaAs1−xNxalloys
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1. Structural, electronic, optical and thermodynamic properties of the cubic quadratic quaternary alloys GaxIn1-xAsyN1-y. Insight from DFT computations;Materials Today Communications;2021-03
2. Structural, electronic, and optical properties of the gallium nitride semiconductor by means of the FP-LAPW method;Journal of Molecular Modeling;2020-11-27
3. First-principles study of structural, electronic, and optical properties of cubic InAs${}_{{\boldsymbol{x}}}$N${}_{{\boldsymbol{y}}}$P${}_{{\boldsymbol{1}}-{\boldsymbol{x}}-{\boldsymbol{y}}}$ triangular quaternary alloys;Chinese Physics B;2017-01
4. First-Principle Study of the Structural, Electronic, and Optical Properties of Cubic InN x P1–x Ternary Alloys under Hydrostatic Pressure;Zeitschrift für Naturforschung A;2016-08-05
5. First principles study of structural, electronic and optical properties of indium gallium nitride arsenide lattice matched to gallium arsenide;Materials Science in Semiconductor Processing;2015-02
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