Unprecedented differences in the diamond nucleation density between carbon- and silicon-faces of 4H-silicon carbides-Reference-Cited by-同舟云学术

Unprecedented differences in the diamond nucleation density between carbon- and silicon-faces of 4H-silicon carbides

Published:2020-07 Issue:7 Volume:31 Page:2013-2018
ISSN:1001-8417
Container-title:Chinese Chemical Letters
language:en
Short-container-title:Chinese Chemical Letters

Author:

Wang Bo,Sukkaew Pitsiri,Song Guichen,Rosenkranz Andreas^ORCID,Lu Yunxiang,Nishimura Kazhihito,Wang Jia,Lyu Jilei,Cao Yang,Yi Jian,Ojamäe Lars,Li He,Jiang Nan

Funder

National Key Research and Development Project

Ningbo 3315 Innovation Team

Science and Technology Innovation 2025 Major Project of Ningbo

National Defense Key Laboratory Fund

Innovation Funding of State Oceanic Administration

Ningbo Industrial Technology Innovation Project

‘13th Five-Year’ Equipment Pre-research Sharing Project

‘Key Talents’ Senior Engineer Project of Ningbo Institute of Materials Technology and Engineering

CONICYT

U-Inicia

Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linköping University

Swedish Research Council

National Supercomputer Centre

Swedish National Infrastructure for Computing

Publisher

Elsevier BV

Subject

General Chemistry

Reference36 articles.

1. Silicon carbide in contention

2. Silicon Carbide as a Platform for Power Electronics

3. Ultrahigh-quality silicon carbide single crystals

4. A silicon carbide room-temperature single-photon source

5. Coherent control of single spins in silicon carbide at room temperature

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