Optical instabilities and localized electronic states in hydrogenated amorphous silicon-Reference-Cited by-同舟云学术

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Optical instabilities and localized electronic states in hydrogenated amorphous silicon

Published:1983-06 Issue:1-2 Volume:9 Page:113-118
ISSN:0379-6787
Container-title:Solar Cells
language:en
Short-container-title:Solar Cells

Author:

Taylor P.C.,Ohlsen W.D.

Publisher

Elsevier BV

Subject

General Engineering

Reference24 articles.

1. Optically induced electron spin resonance in doped amorphous silicon

2. Luminescence and ESR studies of defects in hydrogenated amorphous silicon

3. Reversible conductivity changes in discharge‐produced amorphous Si

4. Optically induced conductivity changes in discharge‐produced hydrogenated amorphous silicon

5. Fatigue effect in luminescence of glow discharge amorphous silicon at low temperatures

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Evolution of D0 and non-D0 Light Induced Defect States in a-Si:H Materials and Their Respective Contribution to Carrier Recombination;MRS Proceedings;2004

2. The Role of Charged Defects In Current Transport Through Hydrogenated Amorphous Silicon Alloys;MRS Proceedings;1998

3. Nature of defects in amorphous GeS and SiN;Journal of Non-Crystalline Solids;1985-05

4. Amorphous silicon bibliography 1983 update introduction;Solar Cells;1985-02

5. Kinetics of the metastable optically induced ESR ina-Si:H;Physical Review B;1985-01-01

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